Product Description
The Candela 8520 inspection system employs proprietary optical technology to simultaneously measure scatter intensity at two angles of incidence. It captures topographic variations, surface reflectance, phase shift and photoluminescence for automatic detection and classification of a broad range of defects of interest (DOI). The 8520 provides surface and photoluminescence defect inspection for GaN wafers, detecting and classifying GaN dislocations, pits and holes for GaN reactor defect control. Its power applications include SiC based transparent wafer inspection and classification of crystal defects such as BPDs (Basal Plane Dislocations), micropipes, stacking faults, bar stacking faults, grain boundaries, threading dislocations, and detection of topographic defects like triangles, carrot, downfall and scratches.
Features
- Detects defects on Wide Band Gap materials including SiC and GaN (substrate and epitaxy) up to 200mm in diameter
- Supports a wide range of wafer thickness
- Detects particles, scratches, cracks, stains, pits, bumps, KOH etch mapping, carrots and surface triangles, basal plane dislocation, stacking faults, grain boundaries, threading dislocations and other macro epitaxial disturbances
使用Cases
- Substrate quality control
- Substrate vendor comparison
- Incoming wafer quality control (IQC)
- Outgoing wafer quality control (IQC)
- CMP (chemical mechanical process) / polishing process control
- Wafer clean process control
- Epitaxy process control
- Substrate to epitaxy correlation
- Epitaxy reactor vendor comparison
- Process tool monitoring
Industries
- SiC and GaN power devices
- Other high-end compound semiconductor devices
Options
- SECS-GEM
- Light tower
- Diamond scribe
- Calibration standards
- Offline software
- Optical character recognition (OCR)
- Photoluminescence
